Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

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題名:	Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide
作者:	賴瓊惠 Lai, Chiung-Hui
貢獻者:	電子工程學系 Electronics Engineering
關鍵詞:	鍺金氧半;微波退火 Ge CMOS;microwave annealing
日期:	2012
上傳時間:	2014-06-27 02:28:05 (UTC+8)
摘要:	For the first time, Ge CMOS with all thermal processes performed by microwave annealing (MWA) has been realized. The full MWA process is under 390 oC. It significantly outperforms conventional rapid thermal annealing (RTA) process in 3 aspects: (1) Diffus
顯示於類別:	[電子工程學系] 研討會論文

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