Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

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题名:	Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide
作者:	賴瓊惠 Lai, Chiung-Hui
贡献者:	電子工程學系 Electronics Engineering
关键词:	鍺金氧半;微波退火 Ge CMOS;microwave annealing
日期:	2012
上传时间:	2014-06-27 02:28:05 (UTC+8)
摘要:	For the first time, Ge CMOS with all thermal processes performed by microwave annealing (MWA) has been realized. The full MWA process is under 390 oC. It significantly outperforms conventional rapid thermal annealing (RTA) process in 3 aspects: (1) Diffus
显示于类别:	[電子工程學系] 研討會論文

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