Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

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Title:	Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	鍺金氧半;微波退火 Ge CMOS;microwave annealing
Date:	2012
Issue Date:	2014-06-27 02:28:05 (UTC+8)
Abstract:	For the first time, Ge CMOS with all thermal processes performed by microwave annealing (MWA) has been realized. The full MWA process is under 390 oC. It significantly outperforms conventional rapid thermal annealing (RTA) process in 3 aspects: (1) Diffus
Appears in Collections:	[Department of Microelectronics] Seminar Papers

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