Chung-Hua University Repository:Item 987654321/37489
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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/37489


    Title: Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation
    Authors: 賴瓊惠
    Lai, Chiung-Hui
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: 頂部鈍化層;奈米線
    top passivation layer;nanowires
    Date: 2012
    Issue Date: 2014-07-01 10:29:35 (UTC+8)
    Abstract: 頂部鈍化層增加感測器敏感度
    The oxidation caused by Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and significantly increases the hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowires. However, previous studies have found
    Appears in Collections:[Department of Microelectronics] Journal Articles

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