Comparison of Characteristics of Rapid Thermal and Microwave
Annealed Amorphous Silicon Thin Films Prepared by Electron Beam Evaporation and Low Pressure Chemical Vapor Deposition

Chung-Hua University Repository > 工學院 > 電子工程學系 > 期刊論文 > Item 987654321/37471

請使用永久網址來引用或連結此文件: http://chur.chu.edu.tw/handle/987654321/37471

題名:	Comparison of Characteristics of Rapid Thermal and Microwave Annealed Amorphous Silicon Thin Films Prepared by Electron Beam Evaporation and Low Pressure Chemical Vapor Deposition
作者:	賴瓊惠 Lai, Chiung-Hui
貢獻者:	電子工程學系 Electronics Engineering
關鍵詞:	E-beam evaporation;low pressure chemical vapor deposition;amorphous silicon thin
日期:	2013
上傳時間:	2014-07-01 10:29:04 (UTC+8)
摘要:	In this study we use chemical and physical vapor depositions to fabricate amorphous silicon (a-Si) films. We also use traditional rapid thermal annealing (RTA) and advanced microwave annealing (MWA) to activate or crystallize a-Si films and then observe t
顯示於類別:	[電子工程學系] 期刊論文

文件中的檔案:

沒有與此文件相關的檔案.

在CHUR中所有的資料項目都受到原著作權保護.