Photolithography control in wafer fabrication based on process capability indices with multiple characteristics

Chung-Hua University Repository > 管理學院 > 工業管理學系 > 期刊論文 > Item 987654321/35391

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://chur.chu.edu.tw/handle/987654321/35391

题名:	Photolithography control in wafer fabrication based on process capability indices with multiple characteristics
作者:	李欣怡 Lee, Amy Hsin-I
贡献者:	工業管理學系 Industrial Management
关键词:	Photolithography;critical dimension;alignment accuracy;photoresist thickness;process yield;critical value Photolithography;critical dimension;alignment accuracy;photoresist thickness;process yield;critical value
日期:	2009
上传时间:	2014-06-27 10:37:22 (UTC+8)
摘要:	Shrinking device geometries and demand for high wafer throughput place a great demand on semiconductor process development, while this development is highly dependent on the advancement of photolithographic technologies. Typically taking about one-third Shrinking device geometries and demand for high wafer throughput place a great demand on semiconductor process development, while this development is highly dependent on the advancement of photolithographic technologies. Typically taking about one-third
显示于类别:	[工業管理學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
p_m515_0069.pdf		25Kb	Adobe PDF	118	检视/开启

在CHUR中所有的数据项都受到原著作权保护.