Photolithography control in wafer fabrication based on process capability indices with multiple characteristics

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Title:	Photolithography control in wafer fabrication based on process capability indices with multiple characteristics
Authors:	李欣怡 Lee, Amy Hsin-I
Contributors:	工業管理學系 Industrial Management
Keywords:	Photolithography;critical dimension;alignment accuracy;photoresist thickness;process yield;critical value Photolithography;critical dimension;alignment accuracy;photoresist thickness;process yield;critical value
Date:	2009
Issue Date:	2014-06-27 10:37:22 (UTC+8)
Abstract:	Shrinking device geometries and demand for high wafer throughput place a great demand on semiconductor process development, while this development is highly dependent on the advancement of photolithographic technologies. Typically taking about one-third Shrinking device geometries and demand for high wafer throughput place a great demand on semiconductor process development, while this development is highly dependent on the advancement of photolithographic technologies. Typically taking about one-third
Appears in Collections:	[Industrial Management] Journal Articles

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