Novel Oxynitride Layer Applied to Flash Memory
using HfO2 as Charge Trapping Layer

CHUR > College of Engineering > Department of Microelectronics > Seminar Papers > Item 987654321/33812

Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/33812

Title:	Novel Oxynitride Layer Applied to Flash Memory using HfO2 as Charge Trapping Layer
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	Oxynitride;HfO2;Flash Memory 氮氧化膜;二氧化铪;快閃記憶體
Date:	2007
Issue Date:	2014-06-27 02:31:08 (UTC+8)
Abstract:	以氮氧化膜應用於二氧化铪為電荷捕捉層的快閃記憶體 When the thickness of tunnel oxide layer is thinner than 7nm, the defects of tunnel oxide will form the leakage path easily. The trapped charges in trapping layer leak out through the leakage path and let we read the wrong data information. Therefore, the
Appears in Collections:	[Department of Microelectronics] Seminar Papers

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