Novel Tunneling Oxynitride Layer Applied to Floating Gate Flash Memory

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Title:	Novel Tunneling Oxynitride Layer Applied to Floating Gate Flash Memory
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	穿隧含氮氧化層;懸浮閘快閃記憶體 Tunneling Oxynitride;Floating Gate Flash Memory
Date:	2010
Issue Date:	2014-06-27 02:30:42 (UTC+8)
Abstract:	穿隧含氮氧化層應用於懸浮閘快閃記憶體 In this letter, we propose a simple novel method to fabricate robust, reliable, high nitrogen content oxynitride dielectrics. Moreover, the process can be easily adopted by current manufacturing technology applied to floating gate flash memory. The prop
Appears in Collections:	[Department of Microelectronics] Seminar Papers

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