Effect of the mixed N2/O2 Oxidation Process on Improvement of the Sensitivity of the SiGe nano-wire

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Title:	Effect of the mixed N2/O2 Oxidation Process on Improvement of the Sensitivity of the SiGe nano-wire
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	奈米線 nano-wire
Date:	2011
Issue Date:	2014-07-18 13:31:28 (UTC+8)
Abstract:	混合氮和氧的氧化過程改善矽鍺奈米線的靈敏度 The improvement of the sensitivity of SiGe nano-wire using the mixed N2/O2 oxidation process has been investigated. The N2 ratio of 13.33% at 950oC anneal temperature could achieve the best performance which is the sensitivity of Si0.86Ge0.14 nano-wire.
Appears in Collections:	[Department of Microelectronics] Seminar Papers

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