| 題名: | Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si3N4/SiO2 Stack of Asymmetric Tunnel Barrier |
| 作者: | 吳建宏
rossiwu |
| 貢獻者: | 電子工程學系
Electronics Engineering |
| 關鍵詞: | nonvolatile memory;NVM;nanocrystal |
| 日期: | 2011 |
| 上傳時間: | 2014-07-01 10:33:42 (UTC+8) |
| 摘要: | Iridium nanocrystals (Ir-NCs) lying on the Si3N4/SiO2 tunneling layer have been demonstrated and Ir-NC-assisted thin-film transistor nonvolatile memory devices were successfully developed. Results show that Ir-NCs with a number density of ∼6×1011 cm-2 and |
| 顯示於類別: | [電子工程學系] 期刊論文
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