Defect Density Extraction of high-κ Dielectric Gate Stack by Combining Charge Pumping and Low Frequency Measurement

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题名:	Defect Density Extraction of high-κ Dielectric Gate Stack by Combining Charge Pumping and Low Frequency Measurement
作者:	吳建宏 rossiwu
贡献者:	電子工程學系 Electronics Engineering
关键词:	high-κ dielectric;HfSiON;charge pumping;low frequency noise
日期:	2009
上传时间:	2014-07-01 10:33:01 (UTC+8)
摘要:	We demonstrate a technique to plot the depth distribution of defect density inside the gate dielectric stack of advanced high-κ CMOSFETs by combining analysis results of frequency-dependent charge pumping and low frequency noise measurement. It shows that
显示于类别:	[電子工程學系] 期刊論文

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