Improvement on Interface Quality and Reliability Properties of HfAlOx MIS Capacitor with Dual Plasma Treatment

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Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/37513

Title:	Improvement on Interface Quality and Reliability Properties of HfAlOx MIS Capacitor with Dual Plasma Treatment
Authors:	吳建宏 rossiwu
Contributors:	電子工程學系 Electronics Engineering
Keywords:	HfAlOx;MIS Capacitor;Dual Plasma Treatment
Date:	2012
Issue Date:	2014-07-01 10:32:09 (UTC+8)
Abstract:	HfO2 is considered a promising gate dielectric material for sub-45 nm CMOS technology. It has been reported that incorporate Al into HfO2 forming Hf aluminates in order to increase the crystallization temperature. However, the growth of the low-k interfac
Appears in Collections:	[Department of Microelectronics] Journal Articles

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