| 题名: | Electrical Improvement of MIS Capacitor with HfAlOx Gate Dielectrics Treated by Dual Plasma Treatment |
| 作者: | 吳建宏
rossiwu |
| 贡献者: | 電子工程學系
Electronics Engineering |
| 关键词: | HfAlOx;Dual Plasma Treatment |
| 日期: | 2012 |
| 上传时间: | 2014-07-01 10:31:19 (UTC+8) |
| 摘要: | High dielectric constant materials (high-k) such as Hf-based thin
films are the promising candidates for 45-nm CMOS technology. It
has been described that nitridation processes could improve
thermal stability and dielectric constants of Hf-based dielectri |
| 显示于类别: | [電子工程學系] 期刊論文
|
