Chung-Hua University Repository:Item 987654321/37497
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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/37497


    Title: Nitrogen Depletion Behavior of High-Nitrogen Oxynitride Films After Reoxidation with O2 and N2O treatment
    Authors: 賴瓊惠
    Lai, Chiung-Hui
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: 含氮氧化層;快速熱氧化;氮空乏;再氧化
    oxynitride;rapid thermal oxidation;nitrogen depletion;nitrous oxide;reoxidation
    Date: 2009
    Issue Date: 2014-07-01 10:30:27 (UTC+8)
    Abstract: 探討高含氮含氮氧化層在O2或和N2O的再氧化處理之後的氮空乏行為
    We investigated the nitrogen depletion behavior of high nitrogen oxynitride after O2 or N2O reoxidation in a rapid thermal furnace. We observed that the nitrogen concentration decreased in both cases, and the nitrogen distribution moved toward the SiO2/Si
    Appears in Collections:[Department of Microelectronics] Journal Articles

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