Effect of the Mixed N2/O2 Oxidation Process on Improvement of the Sensitivity of the SiGe Nano-Wire

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Title:	Effect of the Mixed N2/O2 Oxidation Process on Improvement of the Sensitivity of the SiGe Nano-Wire
Authors:	賴瓊惠 Lai, Chiung-Hui
Contributors:	電子工程學系 Electronics Engineering
Keywords:	矽鍺在絕緣上;生物感測器;靈敏度 SGOI;biosensor;sensitivity
Date:	2011
Issue Date:	2014-07-01 10:30:01 (UTC+8)
Abstract:	研究不同混合氣體氮氣和氧氣比例的氧化過程對矽鍺奈米線的靈敏度的改善 Ge condensation has been reported to improve the hole mobility of the SiGe-on-insulator (SGOI). Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire exhibits higher sensitivity. In this work, we investigated the effect of diff
Appears in Collections:	[Department of Microelectronics] Journal Articles

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