穩健穿隧含氮氧化層改善了SOHOS型的非揮發性記憶體的持久性質 In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal–oxide–semiconductor field-effect transistor (nMOSFETs) and polycrystalline sil
