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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/34129


    Title: High-k TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment
    Authors: 謝英家
    Hsieh, Ing-Jar
    Contributors: 電機工程學系
    Electrical Engineering
    Keywords: MIM Capacitor
    Date: 2010
    Issue Date: 2014-06-27 02:40:18 (UTC+8)
    Abstract: In this study, we successfully fabricated high-k Ir/TiCeO/TaN metal–insulator–metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve cap
    Appears in Collections:[Department of Electrical Engineering] Journal Articles

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