Formation of Iridium Nanocrystals with Highly Thermal Stability for the Applications of Nonvolatile Memory Device with Excellent Trapping Ability

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Title:	Formation of Iridium Nanocrystals with Highly Thermal Stability for the Applications of Nonvolatile Memory Device with Excellent Trapping Ability
Authors:	謝英家 Hsieh, Ing-Jar
Contributors:	電機工程學系 Electrical Engineering
Keywords:	nanocrystals
Date:	2010
Issue Date:	2014-06-27 02:39:42 (UTC+8)
Abstract:	This paper presents the formation of iridium nanocrystals (Ir-NCs) embedded in SiO2 matrix and it can be used for potential applications of nonvolatile memory devices. The NC formation is investigated by varying Ir ﬁlm thickness; and the thermal agglomera
Appears in Collections:	[Department of Electrical Engineering] Journal Articles

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