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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/34055


    Title: Sputtering-deposited AlN film as the gate dielectric for n-MOSFETs Applications
    Authors: 謝英家
    Hsieh, Ing-Jar
    Contributors: 電機工程學系
    Electrical Engineering
    Keywords: Key words;aluminum nitride;AlN;equivalent oxide thickness;EOT;high-k dielectric;MOSFET
    Date: 2014
    Issue Date: 2014-06-27 02:38:20 (UTC+8)
    Abstract: The use of sputter-deposited aluminum nitride (AlN) high permittivity (high-k) dielectric films from an AlN
    target as the gate dielectric of n-MOSFETs is reported. AlN films with equivalent oxide thickness (EOT) of
    around 2.2 nm were prepared and low leak
    Appears in Collections:[Department of Electrical Engineering] Journal Articles

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