Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Asymmetric Tunnel Barrier

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Title:	Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Asymmetric Tunnel Barrier
Authors:	吳建宏 rossiwu
Contributors:	電子工程學系 Electronics Engineering
Keywords:	thin film transistor nonvolatile
Date:	2010
Issue Date:	2014-06-27 02:32:26 (UTC+8)
Abstract:	ridium nanocrystals (Ir-NCs) lying on the Si3N4/SiO2 tunneling layer have been demonstrated and Ir-NC-assisted thin-film transistor nonvolatile memory devices were successfully developed. Results show that Ir-NCs with a number density of ˜6× 1011 cm-2 and
Appears in Collections:	[Department of Microelectronics] Seminar Papers

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