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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/33859


    Title: Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs
    Authors: 吳建宏
    rossiwu
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: ALD MOSFET
    Date: 2009
    Issue Date: 2014-06-27 02:31:56 (UTC+8)
    Abstract: The use of HfSiON as gate dielectric for advanced
    CMOS technology is attracting much attention due to good
    mobility of electrons/holes and significant reduction of gate
    leakage. However, there are critical reliability concerns as
    trade-offs to its good ch
    Appears in Collections:[Department of Microelectronics] Seminar Papers

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