Confined Resistive Switching of TiO2 Dielectrics Resistive Random Access Memory with a nanopore in the TiO2 film created by Focus Ion Beam

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Title:	Confined Resistive Switching of TiO2 Dielectrics Resistive Random Access Memory with a nanopore in the TiO2 film created by Focus Ion Beam
Authors:	吳建宏 rossiwu
Contributors:	電子工程學系 Electronics Engineering
Keywords:	TiO2;high-k material;RRAM;Focus Ion Beam
Date:	2012
Issue Date:	2014-06-27 02:31:43 (UTC+8)
Abstract:	TiO2 high-k material has attracted much attention recently because of its reversible resistance switching behavior for resistive random access memory (RRAM) devices. Essentially, low cost, low power, multi-level cell and reliability close to flash are req
Appears in Collections:	[Department of Microelectronics] Seminar Papers

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