Resistance switching in the Ni/HfOx/Ni nonvolatile memory device with interfacial layer by mixed CF4/O2 plasma treatment

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题名:	Resistance switching in the Ni/HfOx/Ni nonvolatile memory device with interfacial layer by mixed CF4/O2 plasma treatment
作者:	賴瓊惠 Lai, Chiung-Hui
贡献者:	電子工程學系 Electronics Engineering
关键词:	電阻切換;電漿處理 Resistance switching;plasma treatment
日期:	2011
上传时间:	2014-06-27 02:29:49 (UTC+8)
摘要:	鎳/氧化铪/鎳經過電漿處理後的電阻切換 Resistance random access memory (ReRAM) is a promising candidate for nonvolatile memories applications due to its adventages, such as simple structure, rapid operation and high density integration. However, for ReRAM device, the stable resistance changes
显示于类别:	[電子工程學系] 研討會論文

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