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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/33696


    Title: Sensitivity Enhancement in SGOI Nanowire Biosensor Fabricated by Top Surface Passivation
    Authors: 賴瓊惠
    Lai, Chiung-Hui
    Contributors: 電子工程學系
    Electronics Engineering
    Keywords: 保護層;生物感測器
    SiGe-on-Insulator;bio-sensor;passivation
    Date: 2012
    Issue Date: 2014-06-27 02:28:30 (UTC+8)
    Abstract: 表面保護層增強奈米線的靈敏度
    Increasing the fraction of Ge in SiGe-on-insulator (SGOI) using Ge condensation by oxidation significantly increases hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowire. However, our previous studies
    found that the sens
    Appears in Collections:[Department of Microelectronics] Seminar Papers

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