Chung-Hua University Repository:Item 987654321/33077
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    Please use this identifier to cite or link to this item: http://chur.chu.edu.tw/handle/987654321/33077


    Title: The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (0 0 1) LaAlO3
    Authors: 梁美惠
    Liang, Mei-Hui
    Contributors: 通識教育中心
    Center for General Education
    Keywords: Keywords;Domain;Non-polar
    Date: 2010
    Issue Date: 2014-06-27 02:13:32 (UTC+8)
    Abstract: Both non-polar a-plane GaN and ZnO films grown on (0 0 1) LaAlO3 (LAO) substrates consist of
    orthogonal domain structures. The influence of inserted underlying ZnO on the growth behavior of
    subsequently grown GaN has been investigated by using transmissio
    Appears in Collections:[通識中心] 期刊論文

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