Temperature Sensing by Using Film Bulk Acoustic Resonator at 2.4GHz band

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Title:	Temperature Sensing by Using Film Bulk Acoustic Resonator at 2.4GHz band
Authors:	高曜煌 Kao, Yao-Huang
Contributors:	通訊工程學系 Communication Engineering
Keywords:	薄膜體聲波諧振腔;品質因數;射頻壓控振盪器;相位雜訊;CMOS IC製程;中心頻率;頻率調動靈敏度 Bulk Acoustic Wave;AlN thin film;Resonator;Temperature Sensing;and TC
Date:	2009
Issue Date:	2014-06-27 01:59:27 (UTC+8)
Abstract:	薄膜體聲波諧振腔具有高品質因數和頻率穩定度，且其體積小重量輕、插入損耗低、耐用性高、可以與CMOS IC製程做整合等優點，且其頻率特性與溫度係數的關係小於傳統上使用的表面聲波元件，故此計畫將藉由國內CMOS 0.18um及0.13um製程的技術來實現一射頻2.0GHz的壓控振盪器，利用打線外接或是微機電製程技術將薄膜體聲波諧振腔整合到CMOS電路中。根據諧振腔振盪器的原理，由於薄膜體聲波諧振腔具有高品質因數，故我們可期待此計畫之射頻振盪器可達到低相位雜訊，此振盪器預計目標規格之中心頻率2.0G A four-layered Film Bulk Acoustic Resonator (FBAR) with AI/AlN/SiNx/Au composite structure was fabricated. The FBAR is composed of on a surface micromachined cantilever that is released by wet etching the copper scarification layer. The temperature coeffi
Appears in Collections:	[Department of Communication Engineering] Journal Articles

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